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Loss of phosphorus from the indium-indium phosphide system during annealing

R. Srnánek and P. Hábovčík

Lehrstuhl für Mikroelektronik der Slowakischen Technischen Hochschule, 880 19 Bratislava

 

Abstract: The paper deals with the losses of phosphorus from the system In — I n P by annealing; the content of phosphorus in the samples corresponded to 3.2 — 8.0 mole % InP. The phosphorus losses were studied with respect to the annealing temperature (627 —730°C), the annealing duration (10 — 240 minutes) and the flow rate of hydrogen (1.3 — 7.3 l/min). The applicability of the determined dependences to the preparation of epitaxial layers of InP from the liquid phase is discussed.

Full paper in Portable Document Format: 294a484.pdf (in German)

 

Chemical Papers 29 (4) 484–488 (1975)

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