ISSN print edition: 0366-6352 ISSN electronic edition: 1336-9075 Registr. No.: MK SR 9/7 Published monthly

Fabrication of nanohybrids of 1D nickel selenide on 2D graphitic carbon nitride photodetectors for enhanced optoelectronic applications

M. Phemina Selvi, N. Shobanadevi, and Nagarajan Kaliyan

Department of Electronics and Communication Engineering, University College of Engineering, Villupuram, India

E-mail: mphemina@aucev.edu.in

Received: 9 March 2023  Accepted: 11 May 2023

Abstract:

Two-dimensional (2D) materials possess exceptional physical and chemical properties, making them promising for various applications in electronic and optoelectronic devices. In this study, nanohybrids of 1D NiSe on different weight percentages (wt %) of 2D g-C₃N₄ (0%, 1%, 3%, and 5%) were synthesized using a hydrothermal method. The structural, morphological, and optical properties of the synthesized hybrid sample were thoroughly investigated using various basic characterization techniques such as XRD, SEM, TEM, UV–Vis, Photoluminescence, N₂ adsorption–desorption, and XPS. The resulting hybrid material exhibited a high aspect ratio, few stacking layers, a considerable surface area, and an increased band gap, indicating its potential for optoelectronic applications. The exceptional physical and chemical properties of two-dimensional (2D) materials make them highly promising for various applications in electronics and optoelectronics devices. The UV–Vis analysis revealed that the 5%wt g-C₃N₄/NiSe hybrid material demonstrated the highest absorption and the smallest optical band gap of 2.30 eV, indicating its suitability for photo-sensing applications. The I-V characteristics analysis of the synthesized nanoparticles with an applied voltage of ± 4 V revealed an improvement in the 3 and 5 wt% g-C₃N_4/NiSe samples, attributed to the increase in injected charge density. Furthermore, the diode created using the 5 wt% composite showed a maximum barrier height (Φb) of 0.79 eV when subjected to xenon lamp light irradiation, demonstrating its potential for utilization in the upcoming optoelectronics industry.

Graphical abstract

Keywords: 1D NiSe; 2D graphitic carbon nitride; Photo detector; Optoelectronic applications

Full paper is available at www.springerlink.com.

DOI: 10.1007/s11696-023-02872-7

Chemical Papers 77 (9) 5409–5420 (2023)